darlington transistors npn silicon maximum ratings rating symbol value unit collectoremitter voltage v ceo 55 vdc collectorbase voltage v cbo 80 vdc emitterbase voltage v ebo 12 vdc collector current e continuous i c 1.0 adc total device dissipation @ t a = 25 c derate above 25 c p d 625 5.0 mw mw/ c total device dissipation @ t c = 25 c derate above 25 c p d 1.5 12 watts mw/ c operating and storage junction temperature range t j , t stg 55 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to ambient r ja 200 c/w thermal resistance, junction to case r jc 83.3 c/w electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collectoremitter breakdown voltage (i c = 10 madc, v be = 0) v (br)ceo 55 e e vdc collectorbase breakdown voltage (i c = 100 adc, i e = 0) v (br)cbo 80 e e vdc emitterbase breakdown voltage (i e = 10 adc, i c = 0) v (br)ebo 12 e e vdc collector cutoff current (v ce = 60 vdc, v be = 0) i ces e e 50 nadc collector cutoff current (v cb = 60 vdc, i e = 0) i cbo e e 50 nadc emitter cutoff current (v eb = 10 vdc, i c = 0) i ebo e e 50 nadc ? semiconductor components industries, llc, 2001 february, 2001 rev. 1 1 publication order number: bc618/d bc618 case 2904, style 17 to92 (to226aa) 1 2 3 collector 1 base 2 emitter 3
bc618 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit on characteristics collectoremitter saturation voltage (i c = 200 ma, i b = 0.2 ma) v ce(sat) e e 1.1 vdc baseemitter saturation voltage (i c = 200 ma, i b = 0.2 ma) v be(sat) e e 1.6 vdc dc current gain (i c = 100 m a, v ce = 5.0 vdc) (i c = 10 ma, v ce = 5.0 vdc) (i c = 200 ma, v ce = 5.0 vdc) (i c = 1.0 a, v ce = 5.0 vdc) h fe 2000 4000 10000 4000 e e e e e e 50000 e e dynamic characteristics currentgain e bandwidth product (i c = 500 ma, v ce = 5.0 vdc, p = 100 mhz) f t 150 e e mhz output capacitance (v cb = 10 v, i e = 0, f = 1.0 mhz) c ob e 4.5 7.0 pf input capacitance (v eb = 5.0 v, i e = 0, f = 1.0 mhz) c ib e 5.0 9.0 pf r s i n e n ideal transistor figure 1. transistor noise model
bc618 http://onsemi.com 3 noise characteristics (v ce = 5.0 vdc, t a = 25 c) figure 2. noise voltage f, frequency (hz) 50 100 200 500 20 figure 3. noise current f, frequency (hz) figure 4. total wideband noise voltage r s , source resistance (k w ) figure 5. wideband noise figure r s , source resistance (k w ) 5.0 50 70 100 200 30 10 20 1.0 10 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 bandwidth = 1.0 hz r s 0 i c = 1.0 ma 100 m a 10 m a bandwidth = 1.0 hz i c = 1.0 ma 100 m a 10 m a e n , noise voltage (nv) i n , noise current (pa) 2.0 5.0 10 20 50 100 200 500 1000 bandwidth = 10 hz to 15.7 khz i c = 10 m a 100 m a 1.0 ma 8.0 10 12 14 6.0 0 4.0 1.0 2.0 5.0 10 20 50 100 200 500 1000 2.0 bandwidth = 10 hz to 15.7 khz 10 m a 100 m a i c = 1.0 ma v t , total wideband noise voltage (nv) nf, noise figure (db) 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
bc618 http://onsemi.com 4 smallsignal characteristics figure 6. capacitance v r , reverse voltage (volts) 5.0 7.0 10 20 3.0 figure 7. high frequency current gain i c , collector current (ma) figure 8. dc current gain i c , collector current (ma) figure 9. collector saturation region i b , base current ( m a) 2.0 200k 5.0 0.04 4.0 2.0 1.0 0.8 0.6 0.4 0.2 t j = 25 c c, capacitance (pf) 1.5 2.0 2.5 3.0 1.0 0.5 |h fe |, small-signal current gain h fe , dc current gain v ce , collector-emitter voltage (volts) 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 c ibo c obo 0.5 1.0 2.0 0.5 10 20 50 100 200 500 v ce = 5.0 v f = 100 mhz t j = 25 c 100k 70k 50k 30k 20k 10k 7.0k 5.0k 3.0k 2.0k 7.0 10 20 30 50 70 100 200 300 500 t j = 125 c 25 c -55 c v ce = 5.0 v 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 t j = 25 c i c = 10 ma 50 ma 250 ma 500 ma figure 10. aono voltages i c , collector current (ma) figure 11. temperature coefficients i c , collector current (ma) 1.6 5.0 -1.0 v, voltage (volts) 1.4 1.2 1.0 0.8 0.6 7.0 10 20 30 50 70 100 200 300 500 v be(sat) @ i c /i b = 1000 r v , temperature coefficients (mv/ c) q t j = 25 c v be(on) @ v ce = 5.0 v v ce(sat) @ i c /i b = 1000 -2.0 -3.0 -4.0 -5.0 -6.0 5.0 7.0 10 20 30 50 70 100 200 300 500 25 c to 125 c -55 c to 25 c *r vc for v ce(sat) vb for v be 25 c to 125 c -55 c to 25 c *applies for i c /i b h fe /3.0
bc618 http://onsemi.com 5 figure 12. thermal response t, time (ms) 1.0 (), 2.0 5.0 1.0 0.5 0.2 0.1 resistance (normalized) 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 20 50 10 200 500 100 1.0k 2.0k 5.0k 10k figure 13. active region safe operating area v ce , collector-emitter voltage (volts) 1.0k 0.4 700 500 300 200 100 70 50 30 20 10 0.6 1.0 2.0 4.0 6.0 10 20 40 i c , collector current (ma) t a = 25 c d = 0.5 0.2 0.1 0.05 single pulse single pulse current limit thermal limit second breakdown limit z q jc(t) = r(t) ? r q jc t j(pk) - t c = p (pk) z q jc(t) z q ja(t) = r(t) ? r q ja t j(pk) - t a = p (pk) z q ja(t) 1.0 ms 100 m s t c = 25 c 1.0 s design note: use of transient thermal resistance data figure a t p p p p p t 1 1/f dutycycle t 1 f t 1 t p peak pulse power = p p
bc618 http://onsemi.com 6 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. dimension f applies between p and l. dimension d and j apply between l and k minimum. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l f b k g h section xx c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.022 0.41 0.55 f 0.016 0.019 0.41 0.48 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.04 2.66 p --- 0.100 --- 2.54 r 0.115 --- 2.93 --- v 0.135 --- 3.43 --- 1 case 02904 (to226aa) issue ad style 17: pin 1. collector 2. base 3. emitter
bc618 http://onsemi.com 7 notes
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